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Title: Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Physics and Astronomy, National Institute of Technology, Rourkela-769008 (India)
  2. ITER, SOA University, Bhubaneswar-751030 (India)
  3. Department of Bio-Nanotechnology, Gachon University, Gyeonggi-do, Republic of Korea, 461701 (Korea, Republic of)
  4. Department of Materials Science and Engineering, Yonsei University, Seoul, Republic of Korea, 120749 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22490431
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HAFNIUM OXIDES; LEAKAGE CURRENT; MONOCLINIC LATTICES; P-TYPE CONDUCTORS; RADIOWAVE RADIATION; SILICON; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION