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Title: Electronic and multiferroic properties of Zn{sub 0.85}Mg{sub 0.15}O thin film

Thin film sample of Zn{sub 0.85}Mg{sub 0.15}O was prepared on Si (100) substrate by pulsed laser deposition and its structural, electronic, magnetic and ferroelectric properties were investigated. The Zn{sub 0.85}Mg{sub 0.15}O thin film sample is found to show room temperature multiferroic properties; suitable for device fabrication.
Authors:
;  [1] ; ; ; ;  [2]
  1. Department of Physics and Materials Science & Engineering, Jaypee Institute of Information Technology, Noida-201307 (India)
  2. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore-452001 (India)
Publication Date:
OSTI Identifier:
22490426
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; ENERGY BEAM DEPOSITION; FABRICATION; FERROELECTRIC MATERIALS; LASER RADIATION; MAGNESIUM OXIDES; PULSED IRRADIATION; SILICON; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ZINC COMPOUNDS