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Title: Enhancement of photo sensor properties of nanocrystalline ZnO thin film by swift heavy ion irradiation

Nanocrystalline Zinc Oxide (ZnO) thin film prepared by Low cost Successive Ionic Layer Adsorption and Reaction (SILAR) method. This film was irradiated by 120 MeV Ni{sup 7+} ions with the fluence of 5x10{sup 12}ions/cm{sup 2}. The X-ray diffraction study was shows polycrystalline nature with wurtzite structure. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Photo Sensor nature was calculated by I-V characteristics with different sources of light 40W, 60W and 100W.
Authors:
; ;  [1] ; ; ; ;  [2] ;  [2] ;  [3]
  1. Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India)
  2. Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India)
  3. (India)
Publication Date:
OSTI Identifier:
22490425
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ADSORPTION; CUBIC LATTICES; ELECTRIC CONDUCTIVITY; ENERGY GAP; IRRADIATION; LAYERS; MEV RANGE; MULTICHARGED IONS; NANOSTRUCTURES; NICKEL IONS; OPTICAL PROPERTIES; POLYCRYSTALS; SENSORS; SPECTROPHOTOMETRY; THIN FILMS; VISIBLE RADIATION; X-RAY DIFFRACTION; ZINC OXIDES