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Title: Deposition and characterization of diamond thin films by HF-CVD method

Effect of reactor pressure and methane gas concentration on the growth of diamond films on Si (100) substrate by hot filament chemical vapor deposition (HFCVD) method has been studied in this work. Raman spectroscopy measurements of the obtained film confirmed the formation of a mixture of micro and nanocrystalline diamond by showing peaks at 1140 and 1334 cm{sup −1} wave shifts. Scanning electron microscopy results showed formation of well defined faceted diamond grains of 100–500 nm size. Average roughness of the films measured by a surface profilometer was in the range of 40–60 nm.
Authors:
; ;  [1] ;  [2]
  1. Materials Processing Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)
  2. Materials Science Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)
Publication Date:
OSTI Identifier:
22490423
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALS; DIAMONDS; METHANE; NANOSTRUCTURES; PRESSURE DEPENDENCE; RAMAN SPECTROSCOPY; ROUGHNESS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES; THIN FILMS