skip to main content

SciTech ConnectSciTech Connect

Title: Silicon quantum dots in SiO{sub x} dielectrics as energy selective contacts in hot carrier solar cells

Thin films of c-Si QDs embedded in a-SiO{sub x} dielectric matrix was achieved at a low temperature ∼400°C, from one step process by reactive rf magnetron co-sputtering of c-Si wafer and pure SiO{sub 2} targets, in the (H{sub 2}+Ar)- plasma. Formation of a double-barrier structure has been primarily identified from the SAX data and exclusively confirmed from the resonant tunneling current appearing in the J-E characteristic curve peaks, determined by the discrete energy levels of c-Si QDs, at which it could be used as energy selective contacts in hot carrier solar cells.
Authors:
;  [1]
  1. Nano-Science Group, Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata – 700032 (India)
Publication Date:
OSTI Identifier:
22490400
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIAGRAMS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ENERGY LEVELS; MATRIX MATERIALS; QUANTUM DOTS; SILICA; SILICON; SILICON OXIDES; SMALL ANGLE SCATTERING; SOLAR CELLS; SPUTTERING; THIN FILMS; TUNNEL EFFECT; X-RAY DIFFRACTION