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Title: Characterization of silver photodiffusion in Ge{sub 8}Sb{sub 2}Te{sub 11} thin films

Silver-doped amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films have been prepared by photodiffusion at room-temperature; the Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer was deposited by vacuum thermal evaporation. Photodiffusion of Ag into the amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films has been carried out by illuminating the prepared Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer with halogen lamp. The photodiffused silver depth profile was traced by means of time of flight secondary ion mass spectroscopy. The film remains amorphous after Ag photodiffusion. The crystallization temperature of the films was evaluated by temperature dependent sheet resistance measurement. The amorphous nature and crystalline phases of the films have been identified by using X-ray diffraction.
Authors:
 [1] ; ; ;  [2]
  1. Department of Physics, DAV University, Sarmastpur, Jalandhar-144012 (India)
  2. Department of Physics, Guru Nanak Dev University, Amritsar-143005 (India)
Publication Date:
OSTI Identifier:
22490399
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANTIMONIDES; CRYSTALLIZATION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; EVAPORATION; GERMANIUM TELLURIDES; ION MICROPROBE ANALYSIS; LAYERS; LIGHT BULBS; MASS SPECTROSCOPY; SILVER; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIME-OF-FLIGHT METHOD; X-RAY DIFFRACTION