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Title: Epitaxial growth of In{sub x}Ga{sub 1-x}N alloy films on sapphire and silicon by reactive co-sputtering of GaAs and indium

In{sub x}Ga{sub 1-x}N alloy films (0.2
Authors:
;  [1] ;  [2]
  1. Department of Physics, Indian Institute of Technology Bombay, Mumbai – 400076 (India)
  2. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai – 400076 (India)
Publication Date:
OSTI Identifier:
22490396
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; EPITAXY; FILMS; GALLIUM ARSENIDES; INDIUM COMPOUNDS; MOBILITY; MORPHOLOGY; SAPPHIRE; SILICON; SILICON NITRIDES; SPUTTERING; SUBSTRATES; SURFACES; X-RAY DIFFRACTION