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Title: Studies on VO{sub x} thin films deposited over Si{sub 3}N{sub 4} coated Si substrates

Vanadium oxide (VO{sub x}) thin films were deposited on to the silicon nitride (Si{sub 3}N{sub 4}) coated silicon (Si) substrate using reactive direct current magnetron sputtering at different substrate temperatures (T{sub s}). The deposited films were characterized for their structural, morphological, optical and electrical properties. The average grain size of the deposited films was in the range of 95 to 178 nm and the strain varied from 0.071 to 0.054 %. The optical bandgap values of the films were evaluated using UV-Vis spectroscopy and lies in the range of 2.46 to 3.88 eV. The temperature coefficient of resistance (TCR) for the film deposited at 125 °C was -1.23%/°C with the sheet resistivity of 2.7 Ω.cm.
Authors:
;  [1] ;  [2]
  1. Functional Nanomaterials & Devices Lab, Centre for Nanotechnology & Advanced Biomaterials and School of Electrical & Electronics Engineering, SASTRA University, Thanjavur – 613401 (India)
  2. Solid State Physics Laboratory, New Delhi – 110 054 (India)
Publication Date:
OSTI Identifier:
22490389
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; DIRECT CURRENT; ELECTRIC CONDUCTIVITY; ENERGY GAP; EV RANGE; GRAIN SIZE; SILICON; SILICON NITRIDES; SPUTTERING; STRAINS; SUBSTRATES; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; THIN FILMS; ULTRAVIOLET SPECTRA; VANADIUM OXIDES; VISIBLE SPECTRA