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Title: Pseudo capacitive performance of copper oxide thin films grown by RF sputtering

Thin films of Copper Oxide were prepared by radio frequency magnetron sputtering on steel substrates maintained at 250°C under different RF powers ranging from 150W to 250W by keeping the sputtering pressure at 5.7×10{sup −3} mbar and O{sub 2}:Ar ratio of 1:7. The influence of RF power on the pseudo capacitive performance of thin films was studied. The X-ray diffraction studies and Raman studies indicates that all the thin films exhibits CuO phase. The electrochemical studies was done by using three electrode configuration with platinum as reference electrode. From the cyclic voltammetry studies a high rate pseudocapacitance of 227 mFcm{sup −2} at 0.5 mVs{sup −1} and 77% of capacity retention after 1000 cycles was obtained for the CuO thin films prepared at an RF power of 220W.
Authors:
; ;  [1]
  1. Thin Film Lab., Department of Physics, S.V.University, Tirupati-517502 (India)
Publication Date:
OSTI Identifier:
22490387
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITY; COPPER OXIDES; ELECTROCHEMISTRY; PERFORMANCE; PLATINUM; RADIOWAVE RADIATION; RAMAN SPECTROSCOPY; SPUTTERING; STEELS; SUBSTRATES; THIN FILMS; VOLTAMETRY; X-RAY DIFFRACTION