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Title: Effect of Te addition into As{sub 2}Se{sub 3} thin film: Optical property study by FTIR and XPS

In the present work, we report the effect of Te deposition onto As{sub 2}Se{sub 3} film which affects the optical properties. The Te/As{sub 2}Se{sub 3} film was illuminated with 532 nm laser to study the photo induced diffusion. The prepared As{sub 2}Se{sub 3}, Te/As{sub 2}Se{sub 3} films were characterized by X-ray diffraction which show a completely amorphous nature. On the basis of optical transmission data carried out by Fourier Transform infrared Spectroscopy, a non direct transition was found for these films. The optical bandgap is found to be decreased with Te deposition and photo darkening phenomena is observed for the diffused film. The change in the optical constants are also supported by the corresponding change in different types of bonds which are being analyzed by X-ray photoelectron spectroscopy.
Authors:
;  [1] ; ;  [2]
  1. Department of Physics, Utkal University, Bhubaneswar-751004, Odisha (India)
  2. Department of Physics, Indian Institute of Science, Bangalore-560012 (India)
Publication Date:
OSTI Identifier:
22490385
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; AMORPHOUS STATE; ARSENIC SELENIDES; DEPOSITION; DIFFUSION; ENERGY GAP; FOURIER TRANSFORMATION; INFRARED SPECTRA; LASER RADIATION; OPTICAL PROPERTIES; TELLURIUM; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY