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Title: Effect of high pressure on the electrical resistivity of Ge−Te−In glasses

The variation in the electrical resistivity of the chalcogenide glasses Ge{sub 15}Te{sub 85-x}In{sub x} has been studied as a function of high pressure for pressures up to 8.5GPa. All the samples studied undergo a semi-conductor to metallic transition in a continuous manner at pressures between 1.5-2.5GPa. The transition pressure at which the samples turn metallic increases with increase in percentage of Indium. This increase is a direct consequence of the increase in network rigidity with the addition of Indium. At a constant pressure of 0.5GPa, the normalized resistivity shows some signature of the existence of the intermediate phase. Samples recovered after a pressure cycle remain amorphous suggesting that the semi-conductor to metallic transition arises from a reduction of the band gap due to pressure or the movement of the Fermi level into the conduction or valence band.
Authors:
 [1] ;  [2] ; ;  [3] ;  [1]
  1. Department of Physics, Bangalore University, Bangalore-560056 (India)
  2. (India)
  3. Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore-560012 (India)
Publication Date:
OSTI Identifier:
22490381
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; FERMI LEVEL; GERMANIUM TELLURIDES; GLASS; INDIUM COMPOUNDS; PHASE TRANSFORMATIONS; PRESSURE DEPENDENCE; PRESSURE RANGE GIGA PA; REDUCTION; VALENCE; VARIATIONS