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Title: Au catalyst assisted growth of ZnO nanowires by vapour phase transport method on p-Si and fabrication of p-Si/n-ZnO heterojunction diode

In this work ZnO nanowires were grown on p type silicon (p-Si) substrate using Vapor-Liquid-Solid (VLS) approach using Au as catalyst by vapor phase transport growth method. Surface morphology and structural properties of the grown ZnO nanowires were examined by Scanning electron microscope (SEM) and X-ray diffraction (XRD), respectively. Using the n-ZnO nanowires (NW) grown on p-type silicon, n-ZnO NW/p-Si heterojunction diode was fabricated. The rectification property of the fabricated diode was studied by room temperature as well as high temperature (up to 370 K) current-voltage (I-V) measurements.
Authors:
; ;  [1]
  1. Department of Physics, Mangalore University, Mangalagangotri – 574199 (India)
Publication Date:
OSTI Identifier:
22490332
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CATALYSTS; ELECTRIC CONDUCTIVITY; FABRICATION; GOLD; HETEROJUNCTIONS; MORPHOLOGY; NANOWIRES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SCANNING ELECTRON MICROSCOPY; SILICON; SOLIDS; SUBSTRATES; TEMPERATURE DEPENDENCE; VAPORS; X-RAY DIFFRACTION; ZINC OXIDES