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Title: Studies on n-ZnO/p-Si heterojunction fabricated by hydrothermal method

Pure and Aluminum (Al) doped ZnO nanorods were grown on silicon (Si) substrates by hydrothermal method. The grown samples were characterized by field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). FESEM images shows that there is no distinct difference between morphology of Al-doped and undoped nanorods. The pure and Al doped ZnO nanorods were used to fabricate n-ZnO/p-Si p–n heterojunction diodes. Temperature-dependant (313, 473, 523, 573, 623, and 673 K) current voltage (I–V) characteristics for the fabricated diodes are presented in this paper.
Authors:
; ;  [1]
  1. Department of Physics, Mangalore University, Mangalagangotri – 574199 (India)
Publication Date:
OSTI Identifier:
22490315
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; CRYSTAL GROWTH; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; FIELD EMISSION; HETEROJUNCTIONS; HYDROTHERMAL SYNTHESIS; IMAGES; MORPHOLOGY; NANOSTRUCTURES; P-N JUNCTIONS; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION; ZINC OXIDES