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Title: Stress induced growth of Sn nanowires in a single step by sputtering method

Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.
Authors:
;  [1] ; ;  [2]
  1. Department of Physics, University of Mumbai, Vidyanagari, Santacruz (E), Mumbai 400 098 (India)
  2. Dipartimento di Fisica, Università degli Studi di Trento, I-38123 Povo (Trento) (Italy)
Publication Date:
OSTI Identifier:
22490280
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ATMOSPHERES; CORROSION; EQUILIBRIUM; EXTRUSION; FILMS; GRAIN BOUNDARIES; NANOWIRES; RESIDUAL STRESSES; SILICON; SPUTTERING; TIN