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Title: UV light sensing properties of Sm doped vertically aligned ZnO nanorod arrays

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4917734· OSTI ID:22490276
 [1];  [2]
  1. Department of Nanoscience and Technology, Bharathiar University, Coimbatore 46 (India)
  2. Advanced Materials and Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore 46 (India)

Samarium doped ZnO nanorods were grown on silicon substrate by using vapor phase transport method (VPT) with the growth temperature of 950°C. The synthesized nanorods were characterized by XRD, field emission scanning electron microscopy, Raman spectra, and photocurrent measurements. The XRD result revealed that Sm was successfully doped into lattice plane of hexagonal ZnO nanorods. The FESEM result confirms the pure ZnO has nanorod like morphology with an average diameter and length of 130nm and 10µm respectively. The above observation is supported by the Micro-Raman spectroscopy result. The photocurrent in the visible region has been significantly enhanced due to deposition of Sm on the surface of the ZnO nanorods. Sm acts as a visible sensitizer because of its lower band gap compared to ZnO.

OSTI ID:
22490276
Journal Information:
AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English