skip to main content

SciTech ConnectSciTech Connect

Title: Investigation of gas sensing properties of InN nanoparticles

InN nanoparticles were grown by chemical vapor deposition technique using In{sub 2}O{sub 3} as precursor material. Raman spectroscopic studies show the presence of the wurtzite phase of as-grown InN. Size of the nanoparticles were in range from quantum dot (<8 nm) to larger sized particles (100 nm). We studied the gas sensing properties of InN nanoparticles with CH{sub 4} gas. Sensors substrates were fabricated with interdigitated Au electrodes. InN nanoparticles show high response towards CH{sub 4} with minimum detectable concentration of 50 ppm at 200 °C.
Authors:
; ; ;  [1]
  1. Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102 (India)
Publication Date:
OSTI Identifier:
22490274
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABUNDANCE; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; CRYSTAL GROWTH; INDIUM NITRIDES; INDIUM OXIDES; METHANE; NANOPARTICLES; PRECURSOR; QUANTUM DOTS; RAMAN SPECTROSCOPY; SUBSTRATES