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Title: Electrowetting properties of atomic layer deposited Al{sub 2}O{sub 3} decorated silicon nanowires

This paper reports the electrowetting properties of liquid droplet on superhydrophobic silicon nanowires with Atomic layer deposited (ALD) Al{sub 2}O{sub 3} as dielectric layer. Silicon wafer were etched by metal assisted wet chemical etching with silver as catalyst. ALD Al{sub 2}O{sub 3} films of 10nm thickness were conformally deposited over silicon nanowires. Al{sub 2}O{sub 3} dielectric film coated silicon nanowires was chemically modified with Trichloro (1H, 1H, 2H, 2H-perfluorooctyl) silane to make it superhydrophobic(SHP). The contact angle was measured and all the samples exhibited superhydrophobic nature with maximum contact angles of 163° and a minimum contact angle hysteresis of 6°. Electrowetting induced a maximum reversible decrease of the contact angle of 20°at 150V in air.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [5]
  1. Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu (India)
  2. ASTRaL, Lappeenranta University of Technology, Mikkeli (Finland)
  3. (Finland)
  4. Department of NanoScience and Technology, Bharathiar University, Coimbatore, Tamil Nadu (India)
  5. (India)
Publication Date:
OSTI Identifier:
22490261
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AIR; ALUMINIUM OXIDES; CATALYSTS; DEPOSITION; DIELECTRIC MATERIALS; DROPLETS; ETCHING; FILMS; HYDROGEN 1; HYSTERESIS; LAYERS; LIQUIDS; NANOWIRES; SILANES; SILICON; SILVER