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Title: GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.
Authors:
; ; ; ;  [1] ;  [2] ;  [3]
  1. Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India)
  2. Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India)
  3. Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)
Publication Date:
OSTI Identifier:
22490240
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GALLIUM ARSENIDES; HAFNIUM OXIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LAYERS; LEAKAGE CURRENT; MEMORY DEVICES; ORGANOMETALLIC COMPOUNDS; QUANTUM DOTS; RETENTION; SEMICONDUCTOR MATERIALS; TRAPS; TUNNEL EFFECT; ZIRCONIUM OXIDES