Confocal Raman studies in determining crystalline nature of PECVD grown Si nanowires
Journal Article
·
· AIP Conference Proceedings
- SSN Research Centre, Kalavakkam-603110, Tamilnadu (India)
- Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102 (India)
Silicon nanowires of diameter ∼200 nm and length of 2-4 µm are grown in the plasma enhanced chemical vapour deposition technique using nanoclustered Au catalyst assisted vapour-liquid-solid process. The crystallinity in the as-grown and annealed samples is studied using confocal Raman spectroscopic studies. Amorphous phase is formed in the as-grown samples. Structural studies using high resolution transmission electron microscopy confirm the polycrystalline nature in the annealed sample.
- OSTI ID:
- 22490228
- Journal Information:
- AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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