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Title: Nitrogen incorporation in sputter deposited molybdenum nitride thin films

In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.
Authors:
; ; ;  [1] ; ;  [2]
  1. Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria)
  2. Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)
Publication Date:
OSTI Identifier:
22489807
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 2; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ARGON; DIFFUSION; MOLYBDENUM; MOLYBDENUM NITRIDES; NITROGEN; SCANNING ELECTRON MICROSCOPY; SPUTTERING; THIN FILMS