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Title: Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering

Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma processes result in a changed growth regime with different grain sizes and orientations than those produced by processes without a substrate bias. The influence of the RF bias is shown comparatively for reactive RF-sputtered ITO and reactive direct-current-sputtered TiN. The ITO layers exhibit an improved electrical resistivity of 0.5 mΩ cm and an optical absorption coefficient of 0.5 × 10{sup 4 }cm{sup −1} without substrate heating. Room-temperature sputtered TiN layers are deposited that possess a resistivity (0.1 mΩ cm) of 3 orders of magnitude lower than, and a density (5.4 g/cm{sup 3}) up to 45% greater than, those obtained from layers grown using the standard process without a substrate plasma.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. NaMLab gGmbH, Nöthnitzerstr. 64, 01187 Dresden (Germany)
  2. Westsächsische Hochschule Zwickau, Fachgruppe Nanotechnologie, Dr.-Friedrichs-Ring 2a, 08056 Zwickau (Germany)
  3. NaMLab gGmbH, Nöthnitzerstr. 64, 01187 Dresden, Germany and TU Dresden, Institut für Halbleiter- und Mikrosystemtechnik (IHM), 01062 Dresden (Germany)
Publication Date:
OSTI Identifier:
22489798
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; DIRECT CURRENT; ELECTRIC CONDUCTIVITY; GRAIN SIZE; LAYERS; PLASMA; RADIOWAVE RADIATION; SPUTTERING; SUBSTRATES; THIN FILMS; TIN; TIN OXIDES; TITANIUM; TITANIUM NITRIDES