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Title: Zero added oxygen for high quality sputtered ITO: A data science investigation of reduced Sn-content and added Zr

The authors demonstrate mobilities of >45 cm{sup 2}/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO{sub 2}, instead of the more conventional 8–10 wt. %, and had varying ZrO{sub 2} content from 0 to 3 wt. %, with a subsequent reduction in In{sub 2}O{sub 3} content. These films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discovered for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. This result is attributed to the reduced concentration of SnO{sub 2}. The addition of ZrO{sub 2} yielded the highest mobilities at >55 cm{sup 2}/V s and the films showed a modest increase in optical transmission with increasing Zr-content.
Authors:
 [1] ; ; ;  [2]
  1. The School for the Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 and The National Center for Photovoltaics, The National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  2. The National Center for Photovoltaics, The National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
22489792
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 2; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITS; DOPED MATERIALS; FILMS; INDIUM OXIDES; MAGNETRONS; MOBILITY; OXYGEN; PARTIAL PRESSURE; RADIOWAVE RADIATION; SPUTTERING; TIN; TIN OXIDES; ZIRCONIUM OXIDES