skip to main content

SciTech ConnectSciTech Connect

Title: Formation of Si{sup 1+} in the early stages of the oxidation of the Si[001] 2 × 1 surface

The early stages of the oxidation of the Si[001] 2 × 1 surface were studied with synchrotron radiation photoelectron spectroscopy. The analysis was based on the block approach, which is a refinement of spectra-subtraction that accounts for changes on the background signal and for band-bending shifts. By this method, it was possible to robustly show that the formation of Si{sup 1+} is due to oxygen bonding to the upper dimer atoms. Our results contrast with ab initio calculation, which indicates that the most favorable bonding site is the back-bond of the down-dimer.
Authors:
 [1] ;  [2] ;  [3]
  1. CINVESTAV-Unidad Queretaro, Queretaro 76230 (Mexico)
  2. Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600 (Mexico)
  3. SLAC National Accelerator Center, Menlo Park, California 94025 (United States)
Publication Date:
OSTI Identifier:
22489788
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ATOMS; DIMERS; OXIDATION; OXYGEN; PHOTOELECTRON SPECTROSCOPY; SIGNALS; SPECTRA; SURFACES; SYNCHROTRON RADIATION