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Title: Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices

Abstract

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO{sub 2} thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO{sub 2} thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO{sub 2} thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switchingmore » behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications.« less

Authors:
; ; ;  [1]; ;  [2]; ; ;  [3]
  1. Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy)
  2. Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy and Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, C.so Trento 21, 10129 Torino (Italy)
  3. Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, C.so Trento 21, 10129 Torino (Italy)
Publication Date:
OSTI Identifier:
22489779
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; ELECTRIC POTENTIAL; EQUIPMENT; ETCHING; FINANCIAL DATA; LAYERS; RAMAN SPECTROSCOPY; THIN FILMS; THREE-DIMENSIONAL LATTICES; TITANIUM OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Porro, Samuele, Conti, Daniele, Guastella, Salvatore, Ricciardi, Carlo, Jasmin, Alladin, Pirri, Candido F., Bejtka, Katarzyna, Perrone, Denis, and Chiolerio, Alessandro. Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices. United States: N. p., 2016. Web. doi:10.1116/1.4938465.
Porro, Samuele, Conti, Daniele, Guastella, Salvatore, Ricciardi, Carlo, Jasmin, Alladin, Pirri, Candido F., Bejtka, Katarzyna, Perrone, Denis, & Chiolerio, Alessandro. Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices. United States. https://doi.org/10.1116/1.4938465
Porro, Samuele, Conti, Daniele, Guastella, Salvatore, Ricciardi, Carlo, Jasmin, Alladin, Pirri, Candido F., Bejtka, Katarzyna, Perrone, Denis, and Chiolerio, Alessandro. 2016. "Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices". United States. https://doi.org/10.1116/1.4938465.
@article{osti_22489779,
title = {Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices},
author = {Porro, Samuele and Conti, Daniele and Guastella, Salvatore and Ricciardi, Carlo and Jasmin, Alladin and Pirri, Candido F. and Bejtka, Katarzyna and Perrone, Denis and Chiolerio, Alessandro},
abstractNote = {Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO{sub 2} thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO{sub 2} thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO{sub 2} thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications.},
doi = {10.1116/1.4938465},
url = {https://www.osti.gov/biblio/22489779}, journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 1,
volume = 34,
place = {United States},
year = {Fri Jan 15 00:00:00 EST 2016},
month = {Fri Jan 15 00:00:00 EST 2016}
}