Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition
- SPE Core Technology Development Department, Tokyo Electron Yamanashi Ltd., 50 Mitsuzawa, Hosaka-cho, 407-0192 Nirasaki (Japan)
- Leading Edge Process Development Center, Tokyo Electron Ltd., 650 Mitsuzawa, Hosaka-cho, 407-0192 Nirasaki (Japan)
This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient method to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.
- OSTI ID:
- 22489777
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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