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Title: Atomic layer deposition of NiS and its application as cathode material in dye sensitized solar cell

Nickel sulfide (NiS) is grown by atomic layer deposition (ALD) using sequential exposures of bis(2,2,6,6-tetramethylheptane-3,5-dionate)nickel(II) [Ni(thd){sub 2}] and hydrogen sulfide (H{sub 2}S) at 175 °C. Complementary combinations of in situ and ex situ characterization techniques are used to understand the deposition chemistry and the nature of film growth. The saturated growth rate of ca. 0.21 Å per ALD cycle is obtained, which is constant within the ALD temperature window (175–250 °C). As deposited films on glass substrates are found polycrystalline without any preferred orientation. Electrical transport measurement reveals degenerative/semimetallic characteristics with a carrier concentration of ca. 9 × 10{sup 22} cm{sup −3} at room temperature. The ALD grown NiS thin film demonstrates high catalytic activity for the reduction of I{sup −}/I{sub 3}{sup −} electrolyte that opens its usage as cost-effective counter electrode in dye sensitized solar cells, replacing Pt.
Authors:
 [1] ;  [2]
  1. Center for Research in Nanotechnology and Sciences, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)
  2. Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)
Publication Date:
OSTI Identifier:
22489774
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; CATHODES; DYES; GRAIN ORIENTATION; HYDROGEN SULFIDES; NICKEL; NICKEL SULFIDES; SOLAR CELLS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS