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Title: Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO{sub 2}, ZrO{sub 2}, and HfO{sub 2} by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O{sub 2} has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O{sub 2}) and several metal organic precursors based on TDMA ligands. The effect of O{sub 2} exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H{sub 2}O and PEALD with O{sub 2} plasma.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States)
  2. Physics of Nanostructured Materials, University of Vienna, 1090 Vienna (Austria)
  3. Department of Mechanical Engineering, Stanford University, Stanford, California 94305 and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22489770
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; HAFNIUM OXIDES; METALS; ORGANOMETALLIC COMPOUNDS; OXYGEN; PLASMA; PRECURSOR; TITANIUM OXIDES; ZIRCONIUM OXIDES