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Title: Atomic layer deposition of boron-containing films using B{sub 2}F{sub 4}

Ultrathin and conformal boron-containing atomic layer deposition (ALD) films could be used as a shallow dopant source for advanced transistor structures in microelectronics manufacturing. With this application in mind, diboron tetrafluoride (B{sub 2}F{sub 4}) was explored as an ALD precursor for the deposition of boron containing films. Density functional theory simulations for nucleation on silicon (100) surfaces indicated better reactivity of B{sub 2}F{sub 4} in comparison to BF{sub 3}. Quartz crystal microbalance experiments exhibited growth using either B{sub 2}F{sub 4}-H{sub 2}O for B{sub 2}O{sub 3} ALD, or B{sub 2}F{sub 4}-disilane (Si{sub 2}H{sub 6}) for B ALD, but in both cases, the initial growth per cycle was quite low (≤0.2 Å/cycle) and decreased to near zero growth after 8–30 ALD cycles. However, alternating between B{sub 2}F{sub 4}-H{sub 2}O and trimethyl aluminum (TMA)-H{sub 2}O ALD cycles resulted in sustained growth at ∼0.65 Å/cycle, suggesting that the dense –OH surface termination produced by the TMA-H{sub 2}O combination enhances the uptake of B{sub 2}F{sub 4} precursor. The resultant boron containing films were analyzed for composition by x-ray photoelectron spectroscopy, and capacitance measurements indicated an insulating characteristic. Finally, diffused boron profiles less than 100 Å were obtained after rapid thermal anneal of the boron containing ALD film.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [4] ; ; ; ;  [5]
  1. Argonne National Laboratory, Argonne, Illinois 60126 (United States)
  2. Schrödinger, Inc., San Diego, California 92122 (United States)
  3. Seitek50, Palm Coast, Florida 32135 (United States)
  4. Current Scientific, San Jose, California 95124 (United States)
  5. Entegris, Danbury, Connecticut 06810 (United States)
Publication Date:
OSTI Identifier:
22489765
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; BORON; BORON CHLORIDES; BORON FLUORIDES; BORON OXIDES; CAPACITANCE; DENSITY FUNCTIONAL METHOD; FILMS; MICROELECTRONICS; PRECURSOR; SILANES; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY