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Title: Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study

The process parameters' impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiO{sub x}N{sub y}) films was studied. Titanium(IV)isopropoxide in combination with NH{sub 3} plasma and tetrakis(dimethylamino)titanium by applying N{sub 2} plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiO{sub x}N{sub y} films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film properties can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant combination.
Authors:
; ;  [1] ; ; ; ; ;  [2]
  1. Brandenburg University of Technology Cottbus-Senftenberg, Applied Physics and Sensors, K.-Wachsmann-Allee 17, 03046 Cottbus (Germany)
  2. SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22489760
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMMONIA; BREAKDOWN; CAPACITANCE; DIELECTRIC MATERIALS; ELLIPSOMETRY; FILMS; NITRIDES; NITROGEN; OXYGEN; PERMITTIVITY; PLASMA; PRECURSOR; TITANIUM; TITANIUM OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY