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Title: Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N{sub 2}/H{sub 2} plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was studied in both self-limiting growth window and thermal decomposition-limited growth region. With increased substrate temperature, film crystallinity improved, and the optical band edge decreased from 3.60 to 3.52 eV. The refractive index and reflectivity in Reststrahlen band increased with the substrate temperature. Compressive strain is observed for both samples, and the surface roughness is observed to increase with the substrate temperature. Despite these temperature dependent material properties, the chemical composition, E{sub 1}(TO), phonon position, and crystalline phases present in the GaN film were relatively independent from growth temperature.
Authors:
;  [1] ; ; ; ;  [2]
  1. Department of Physics, Faculty of Arts and Sciences, Marmara University, Goztepe, 34722 Istanbul (Turkey)
  2. Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, 06800 Ankara, Turkey and National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, 06800 Ankara (Turkey)
Publication Date:
OSTI Identifier:
22489758
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; CHEMICAL COMPOSITION; DEPOSITION; EV RANGE 01-10; GALLIUM NITRIDES; HOLLOW CATHODES; LAYERS; PHONONS; PLASMA; REFLECTIVITY; REFRACTIVE INDEX; ROUGHNESS; STRAINS; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS