Room temperature plasma enhanced atomic layer deposition for TiO{sub 2} and WO{sub 3} films
- Department of Physical Engineering and Informatics, University of Applied Science, Westsächsische Hochschule Zwickau, Dr.-Friedrichs-Ring 2a, 08056 Zwíckau (Germany)
This paper presents a study on plasma enhanced atomic layer deposition (ALD) of TiO{sub 2} and WO{sub 3} films on silicon substrates. At low temperatures, ALD processes, which are not feasible at high temperatures, could be possible. For example, temperatures at 180 °C and above allow no WO{sub 3} ALD process with WF{sub 6} as a precursor because etching processes hinder film growth. Further low temperature deposition techniques are needed to coat temperature sensitive materials. For the deposition, WF{sub 6} and TiCl{sub 4} are used as metal precursors and O{sub 2} and H{sub 2}O as oxygen sources. The depositions were accomplished in the temperature range of 30 °C up to 180 °C for both metal oxides. Spectroscopic ellipsometry, x-ray reflection, and grazing incidence diffraction were used to investigate the deposited ALD thin films. Film growth, density, crystallinity, and roughness are discussed as functions of temperature after ensuring the ALD requirement of self-saturating adsorption. Growth rates and measured material properties are in good agreement with literature data.
- OSTI ID:
- 22489751
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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