skip to main content

Title: Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO{sub 2} films

The electronic structure of HfO{sub 2} thin films is investigated employing resonant photoelectron spectroscopy (resPES). The detailed analysis of the O1s resonance profile enables the determination of the partial density of states for the valence and the conduction bands as well as the electronic band gap to be 6.2 eV. The position of the charge neutrality level is evaluated. Thereby, it is demonstrated that the resPES data are able to combine information both for the valence as well as for the conduction band states. In addition, evidences for intrinsic in-gap states attributed to polaronic and charge transfer states are given. Electronic charges within the atomic layer deposition-HfO{sub 2} films are identified, pointing out that the amount of charges is essential to determine the accurate position of the surface potentials.
Authors:
; ;  [1]
  1. Applied Physics and Sensors, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany)
Publication Date:
OSTI Identifier:
22489750
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY OF STATES; DEPOSITION; ELECTRONIC STRUCTURE; EV RANGE 01-10; HAFNIUM OXIDES; LAYERS; PHOTOELECTRON SPECTROSCOPY; RESONANCE; SURFACE POTENTIAL; THIN FILMS; VALENCE