Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition

Journal Article · Fri Jan 15 00:00:00 EST 2016 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4935337· OSTI ID:22489748

Hoffmann, Lukas; Theirich, Detlef; Hasselmann, Tim; Räupke, André; Schlamm, Daniel; Riedl, Thomas ^[1]

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1. Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-Str. 21, 42119 Wuppertal (Germany)

This paper reports on aluminum oxide (Al{sub 2}O{sub 3}) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O{sub 2} plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al{sub 2}O{sub 3} films on silicon and indium tin oxide coated polyethylene terephthalate. The properties of the APPALD-grown layers (refractive index, density, etc.) are compared to that deposited by conventional thermal ALD at low pressures. The films films deposited at atmospheric pressure show water vapor transmission rates as low as 5 × 10{sup −5} gm{sup −2}d{sup −1}.

• OSTI ID: 22489748
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ATMOSPHERIC PRESSURE
DENSITY
DEPOSITS
PLASMA
POLYESTERS
REFRACTIVE INDEX
SILICON
THIN FILMS
TIN OXIDES
WATER VAPOR