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Title: Blistering during the atomic layer deposition of iridium

The authors report on the formation of blisters during the atomic layer deposition of iridium using iridium acetylacetonate and oxygen precursors. Films deposited on fused silica substrates led to sparsely distributed large blisters while in the case of silicon with native oxide additional small blisters with a high density was observed. It is found that the formation of blisters is favored by a higher deposition temperature and a larger layer thickness. Postdeposition annealing did not have a significant effect on the formation of blisters. Finally, changing purge duration during the film growth allowed us to avoid blistering and evidenced that impurities released from the film in gas phase were responsible for the formation of blisters.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Institut für Angewandte Physik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany)
  2. Fraunhofer IOF, Albert-Einstein-Strasse 7, 07743 Jena (Germany)
Publication Date:
OSTI Identifier:
22489747
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ANNEALING; BLISTERS; DENSITY; DEPOSITION; DEPOSITS; FILMS; IMPURITIES; IRIDIUM; LAYERS; OXIDES; OXYGEN; PRECURSOR; SILICA; SILICON; SUBSTRATES; THICKNESS