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Title: Atomic layer deposition of ultrathin Cu{sub 2}O and subsequent reduction to Cu studied by in situ x-ray photoelectron spectroscopy

The growth of ultrathin (<5 nm) Ru-doped Cu{sub 2}O films deposited on SiO{sub 2} by atomic layer deposition (ALD) and Cu films by subsequent reduction of the Cu{sub 2}O using HCO{sub 2}H or CO is reported. Ru-doped Cu{sub 2}O has been deposited by a mixture of 16: 99 mol. % of [({sup n}Bu{sub 3}P){sub 2}Cu(acac)] as Cu precursor and 17: 1 mol. % of [Ru(η{sup 5}-C{sub 7}H{sub 11})(η{sup 5}-C{sub 5}H{sub 4}SiMe{sub 3})] as Ru precursor. The catalytic amount of Ru precursor was to support low temperature reduction of Cu{sub 2}O to metallic Cu by formic acid (HCO{sub 2}H) on arbitrary substrate. In situ x-ray photoelectron spectroscopy investigations of the Cu{sub 2}O ALD film indicated nearly 1 at. % of carbon contamination and a phosphorous contamination below the detection limit after sputter cleaning. Systematic investigations of the reduction of Ru-doped Cu{sub 2}O to metallic Cu by HCO{sub 2}H or CO as reducing agents are described. Following the ALD of 3.0 nm Cu{sub 2}O, the ultrathin films are reduced between 100 and 160 °C. The use of HCO{sub 2}H at 110 °C enabled the reduction of around 90% Cu{sub 2}O. HCO{sub 2}H is found to be very effective in the removal of oxygen from Ru-doped Cu{sub 2}O filmsmore » with 2.5–4.7 nm thickness. In contrast, CO was effective for the removal of oxygen from the Cu{sub 2}O films only below 3.0 nm at 145 °C. Root mean square surface roughness of 0.4 ± 0.1 nm was observed from atomic force microscopy (AFM) investigations after the ALD of Cu{sub 2}O, followed by the subsequent reduction of 3.0 nm Cu{sub 2}O using either HCO{sub 2}H at 110 °C or CO at 145 °C on SiO{sub 2}. Furthermore, ex situ low energy ion scattering and AFM investigations confirmed that the Cu{sub 2}O film after ALD and Cu films after subsequent reduction was continuous on the SiO{sub 2} substrate.« less
Authors:
 [1] ; ;  [2] ; ;  [3] ; ; ; ; ;  [4]
  1. Center for Microtechnologies—ZfM, Technische Universität Chemnitz, D-09107 Chemnitz (Germany)
  2. Institute of Chemistry, Inorganic Chemistry, Technische Universität Chemnitz, D-09107 Chemnitz (Germany)
  3. ION-TOF GmbH, Heisenbergstr. 15, D-48149 Münster (Germany)
  4. Center for Microtechnologies—ZfM, Technische Universität Chemnitz, D-09107 Chemnitz, Germany and Fraunhofer Institute for Electronic Nano Systems—ENAS, Technologie-Campus 3, D-09126 Chemnitz (Germany)
Publication Date:
OSTI Identifier:
22489745
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; ATOMIC FORCE MICROSCOPY; CARBON MONOXIDE; COPPER OXIDES; DEPOSITION; DOPED MATERIALS; LAYERS; PRECURSOR; REDUCING AGENTS; REDUCTION; ROUGHNESS; SCATTERING; SENSITIVITY; SILICON OXIDES; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY