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Title: Analysis of scattering mechanisms in zinc oxide films grown by the atomic layer deposition technique

In this work, the analysis of the temperature-dependent electrical conductivity of highly crystalline zinc oxide (ZnO) thin films obtained by the Atomic Layer Deposition (ALD) method is performed. It is deduced that the most important scattering mechanisms are: scattering by ionized defects (at low temperatures) as well as by phonons (mainly optical ones) at higher temperatures. Nevertheless, the role of grain boundaries in the carrier mobility limitation ought to be included as well. These conclusions are based on theoretical analysis and temperature-dependent Hall mobility measurements. The presented results prove that existing models can explain the mobility behavior in the ALD-ZnO films, being helpful for understanding their transport properties, which are strongly related both to the crystalline quality of deposited ZnO material and defects in its lattice.
Authors:
; ; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
  2. (Poland)
Publication Date:
OSTI Identifier:
22489537
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER MOBILITY; DEPOSITION; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; LAYERS; PHONONS; SCATTERING; TEMPERATURE DEPENDENCE; THIN FILMS; ZINC OXIDES