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Title: Recombination by grain-boundary type in CdTe

We conducted cathodoluminescence (CL) spectrum imaging and electron backscatter diffraction on the same microscopic areas of CdTe thin films to correlate grain-boundary (GB) recombination by GB “type.” We examined misorientation-based GB types, including coincident site lattice (CSL) Σ = 3, other-CSL (Σ = 5–49), and general GBs (Σ > 49), which make up ∼47%–48%, ∼6%–8%, and ∼44%–47%, respectively, of the GB length at the film back surfaces. Statistically averaged CL total intensities were calculated for each GB type from sample sizes of ≥97 GBs per type and were compared to the average grain-interior CL intensity. We find that only ∼16%–18% of Σ = 3 GBs are active non-radiative recombination centers. In contrast, all other-CSL and general GBs are observed to be strong non-radiative centers and, interestingly, these GB types have about the same CL intensity. Both as-deposited and CdCl{sub 2}-treated films were studied. The CdCl{sub 2} treatment reduces non-radiative recombination at both other-CSL and general GBs, but GBs are still recombination centers after the CdCl{sub 2} treatment.
Authors:
;  [1] ;  [2] ; ; ; ;  [1] ; ;  [3]
  1. National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States)
  2. (United States)
  3. Department of Physics & Astronomy, University of Toledo, Toledo, Ohio 43606 (United States)
Publication Date:
OSTI Identifier:
22489520
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CADMIUM CHLORIDES; CADMIUM TELLURIDES; CATHODOLUMINESCENCE; DIFFRACTION; GRAIN BOUNDARIES; LENGTH; RECOMBINATION; SPECTRA; SURFACES; THIN FILMS