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Title: Monte-Carlo simulation of nano-collected current from a silicon sample containing a linear arrangement of uncapped nanocrystals

A Monte-Carlo simulation algorithm is used to study electron beam induced current in an intrinsic silicon sample, which contains at its surface a linear arrangement of uncapped nanocrystals positioned in the irradiation trajectory around the hemispherical collecting nano-contact. The induced current is generated by the use of electron beam energy of 5‚ÄČkeV in a perpendicular configuration. Each nanocrystal is considered as a recombination center, and the surface recombination velocity at the free surface is taken to be zero. It is shown that the induced current is affected by the distance separating each nanocrystal from the nano-contact. An increase of this separation distance translates to a decrease of the nanocrystals density and an increase of the minority carrier diffusion length. The results reveal a threshold separation distance from which nanocrystals have no more effect on the collection efficiency, and the diffusion length reaches the value obtained in the absence of nanocrystals. A cross-section characterizing the nano-contact ability to trap carriers was determined.
Authors:
 [1] ;  [2]
  1. Laboratory of Metallic and Semiconducting Materials, Biskra University, B.P. 145, RP 07000 Biskra (Algeria)
  2. Laboratoire de Recherche en Nanosciences (EA4682), UFR SEN, Université de Reims, Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France)
Publication Date:
OSTI Identifier:
22489516
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; COMPUTERIZED SIMULATION; CURRENTS; DENSITY; DIFFUSION LENGTH; DISTANCE; ELECTRON BEAMS; KEV RANGE 01-10; MONTE CARLO METHOD; NANOSTRUCTURES; RECOMBINATION; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACES; TRAPS