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Title: Influence of Ce doping on structural and photoelectric properties of CuInS{sub 2} thin films

Cerium doped CuInS{sub 2} thin films were successfully fabricated by a powder metallurgy method. X-ray diffraction and scanning electron microscope measurements showed that the as-prepared CuIn{sub 1−x}Ce{sub x}S{sub 2} samples are of good crystallinity and crystallize with chalcopyrite structure when sintering at 550 °C. The presence of Ce{sup 3+} in host material was conformed by X-ray photoelectron spectroscopy. Two subband photon absorption peaks were observed at 1710 nm (0.73 eV) and 1955 nm (0.63 eV) in the UV–Vis–NIR absorption spectrum. This behavior could suggest that an intermediate band forms in the forbidden band of CuInS{sub 2} semiconductor due to cerium incorporation. The optical bandgap of CuIn{sub 1−x}Ce{sub x}S{sub 2} films was tuned in the range of 1.38 eV to 1.23 eV with increasing cerium content. And the electrical conductivity could be improved if doped moderate cerium content, especially x = 0.1.
Authors:
; ; ; ;  [1]
  1. School of Physical Science and Technology, Inner Mongolia University, Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, Hohhot 010021 (China)
Publication Date:
OSTI Identifier:
22489511
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ABSORPTION SPECTRA; CERIUM; CERIUM IONS; CHALCOPYRITE; COPPER SULFIDES; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; INDIUM SULFIDES; PHOTONS; POWDER METALLURGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SINTERING; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY