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Title: Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22489491
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANIONS; ANISOTROPY; BUFFERS; CATIONS; CRYSTALS; FERROELECTRIC MATERIALS; FERROMAGNETIC RESONANCE; LAYERS; LEAD TELLURIDES; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MOLECULAR BEAM EPITAXY; POTASSIUM CHLORIDES; STRAINS; SUBSTRATES; THIN FILMS; TRIGONAL LATTICES