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Title: Electronic transport of titanate heterostructures and their potential as channels on (001) Si

Perovskite oxides and their heterostructures have demonstrated considerable potential for devices that require high carrier densities. These oxides are typically grown on ceramic substrates that suffer from low thermal conductivity, which limits performance under high currents, and from the limited size of substrates, which precludes large scale integration and processing. We address both of these hurdles by integrating oxide heterostructures with high carrier density 2D electron gases (2DEGs) directly on (001) Si. 2DEGs grown on Si show significant improvement of the high current performance over those grown on oxide substrates, a consequence of the higher thermal conductivity of the substrate. Hall analysis, transmission line measurements, and the conductance technique are employed for a detailed analysis of the carrier density, contact resistance, mobility, and electron drift velocities. Current densities of 10 A/cm are observed at room temperature with 2.9 × 10{sup 14} electrons/cm{sup 2} at a drift velocity exceeding 3.5 × 10{sup 5 }cm/s. These results highlight the promise of oxide 2DEGs integration on Si as channels for high electron density devices.
Authors:
; ;  [1] ; ;  [2] ;  [2] ;  [3] ;  [1] ;  [3]
  1. Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States)
  2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22489474
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; CERAMICS; CURRENT DENSITY; ELECTRON DENSITY; ELECTRON DRIFT; HIGH ROOMS; MOBILITY; OXIDES; PERFORMANCE; PEROVSKITE; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THERMAL CONDUCTIVITY; TITANATES