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Title: Model of Ni-63 battery with realistic PIN structure

GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination.
Authors:
; ;  [1] ;  [2] ; ;  [1] ;  [3] ; ;  [1] ; ; ;  [4]
  1. Georgia Tech Lorraine, Georgia Tech-C.N.R.S., UMI2958, 2-3 rue Marconi, 57070 Metz (France)
  2. (United States)
  3. (France)
  4. Laboratory for Photonics and Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis (France)
Publication Date:
OSTI Identifier:
22489472
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACCURACY; CARRIERS; DESIGN; EFFICIENCY; ENERGY SOURCES; EV RANGE 01-10; GALLIUM NITRIDES; ILLUMINANCE; MONTE CARLO METHOD; NICKEL 63; SCANNING ELECTRON MICROSCOPY