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Title: Silicon junctionless field effect transistors as room temperature terahertz detectors

Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that the junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warsaw (Poland)
  2. Institute of High Pressure Physics of the Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland)
  3. (France)
  4. Institute of Optoelectronics, Military University of Technology, ul. gen. S. Kaliskiego 2, 00-908 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22489466
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; MOSFET; NOISE; OXIDES; RADIATION DETECTION; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE RANGE 0273-0400 K; VELOCITY