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Title: Efficiency droop improvement in InGaN light-emitting diodes with graded InGaN barriers of increasing indium composition

In this work, graded barrier InGaN light-emitting diodes with increasing indium composition barriers are proposed and investigated numerically. When the conventional GaN barriers are replaced by this unique graded InGaN barrier design, the forward voltage at 100 mA is reduced from 3.32 V to 3.27 V, and the efficiency droop is improved from 46.6% to 7.5%. The simulation results observed in this work indicate that these improvements can be attributed to increased electron confinement and enhanced hole injection efficiency caused by the modified energy band diagram.
Authors:
; ; ;  [1]
  1. College of Physics Science and Technology & Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225002 (China)
Publication Date:
OSTI Identifier:
22489450
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DESIGN; EFFICIENCY; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; GALLIUM NITRIDES; HOLES; INDIUM; LIGHT EMITTING DIODES; SIMULATION