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Title: Investigation of narrow-band thermal emission from intersubband transitions in quantum wells

We investigate thermal emission from n-doped GaAs/AlGaAs quantum wells (QWs). Emission peaks with Lorentzian shapes (linewidth 11∼19 meV) that reflect transitions between the first and second conduction subbands are observed in the mid-infrared range. It is demonstrated that the emission characteristics can be tuned by modifying the QW parameters. The peak emissivity is increased from 0.3 to 0.9 by modifying the doping density, and the peak wavelength is tuned from 6 to 10 μm by changing the well width. The obtained results are useful for the design of narrow-band thermal emitters.
Authors:
 [1] ;  [2] ; ; ; ;  [1]
  1. Department of Electronic Science and Engineering, Kyoto University, Katsura, Kyoto 615-8510 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22489449
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; DESIGN; DOPED MATERIALS; EMISSION; EMISSIVITY; GALLIUM ARSENIDES; PEAKS; QUANTUM WELLS; SHAPE; WAVELENGTHS; WIDTH