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Title: Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V{sub 2}) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.
Authors:
; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)
Publication Date:
OSTI Identifier:
22489448
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPTURE; CARBON; CARRIERS; CHARGE STATES; CROSS SECTIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELDS; ENERGY SPECTRA; OXYGEN; SEMICONDUCTOR MATERIALS; SILICON; SIMULATION; TRANSISTORS; TRAPS; VACANCIES