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Title: Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.
Authors:
; ;  [1]
  1. Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan)
Publication Date:
OSTI Identifier:
22489424
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; FILMS; HEAT TRANSFER; PHASE CHANGE MATERIALS; PHASE TRANSFORMATIONS; PROCESSING; QUARTZ; SUBSTRATES; TRANSIENTS; VANADIUM OXIDES