Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

Journal Article · Mon Feb 01 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4941405· OSTI ID:22489424

Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo ^[1]

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1. Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan)

Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

• OSTI ID: 22489424
• Journal Information: Applied Physics Letters, Vol. 108, Issue 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
FILMS
HEAT TRANSFER
PHASE CHANGE MATERIALS
PHASE TRANSFORMATIONS
PROCESSING
QUARTZ
SUBSTRATES
TRANSIENTS
VANADIUM OXIDES