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Title: Few-layer SnSe{sub 2} transistors with high on/off ratios

We report few-layer SnSe{sub 2} field effect transistors (FETs) with high current on/off ratios. By trying different gate configurations, 300 nm SiO{sub 2} and 70 nm HfO{sub 2} as back gate only and 70 nm HfO{sub 2} as back gate combined with a top capping layer of polymer electrolyte, few-layer SnSe{sub 2} FET with a current on/off ratio of 10{sup 4} can be obtained. This provides a reliable solution for electrically modulating quasi-two-dimensional materials with high electron density (over 10{sup 13} cm{sup −2}) for field-effect transistor applications.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190 (China)
  2. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22489423
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURRENTS; ELECTROLYTES; ELECTRON DENSITY; FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; LAYERS; POLYMERS; SILICA; SILICON OXIDES; TIN SELENIDES; TWO-DIMENSIONAL SYSTEMS