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Title: Electric field-induced transport modulation in VO{sub 2} FETs with high-k oxide/organic parylene-C hybrid gate dielectric

We report on the observation of reversible and immediate resistance switching by high-k oxide Ta{sub 2}O{sub 5}/organic parylene-C hybrid dielectric-gated VO{sub 2} thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO{sub 2} through the electrostatic field-induced transport modulation.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3]
  1. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
  2. (China)
  3. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
Publication Date:
OSTI Identifier:
22489422
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; CARRIERS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRONS; HOLES; MODULATION; PHASE TRANSFORMATIONS; TANTALUM OXIDES; THIN FILMS; TRANSITION TEMPERATURE; VANADIUM OXIDES